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Volume 12 Issue 07
July 2026
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Author(s)
K. Vijayakumar G.Anbazhagan J.Vijayarajasekaran L.Amalraj
Abstract
Tin Disulphide (SnS2) In Thin Film Form Was Deposited On Glass Substrate By Chemical Spray Pyrolysis Technique Using The Precursor Solutions Of SnCl2.2H2O And N-n Dimethyl Thiourea At The Molar Concentration 0.3 M At The Substrate Temperature 473 K. Using
Keywords
Thin Film; Band Gap; Activation Energy;hexagonal; Crystallite;
Paper ID
IJSARTV3I515428
Publication Date
May 30, 2017
Research Area
Physics