Impact Factor: 7.883
Submit Paper
Volume 5, Issue 1 (January 2019)

Modeled The Front End Process For Fabrication Of Gan Based Laser Diode

Impact Factor
7.883
Call For Paper
Volume 12 Issue 07

July 2026

Download Paper Format
Copyright Form
Share on:

Author(s)

Shaloo Gupta Shivani Saxena

Abstract

In This Paper, We Have Presented The Modeling And Simulation Of GaN Based LASER Diodes (LDs). Here The Complete Structure Of MQW (InGaN) Blue LD Is Grown On Epitaxial Laterally Overgrown GaN (ELOG) And Sapphire Substrate. ELOG Is Used To Improve The Lifet


Keywords

Gallium Nitride Blue Laser Diode (LDs) Wide Band Gap ELOG LD Characteristics Dev-edit..

Paper ID

IJSARTV5I129294

Publication Date

January 28, 2019

Research Area

Electronics

Submit Your Paper to IJSART

Join the global research community with IJSART. Submit your paper, share your work, and gain worldwide recognition!