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Volume 3, Issue 4 (April 2017)

Low Power Carbon Nano Tube Transistor Based 8t Full Adder Using Mtcmos Technique

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Volume 12 Issue 07

July 2026

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Author(s)

Neelam jain Megha chitranshi

Abstract

In This Article A Low Power Carbon Nano Tube Transistor Based Novel 10T Full Adder Cell Is Designed. This Design Is Simulated In 32nm Technology Node Using H-SPICE Simulator. In This Article Multi Threshold Technique Is Used, By Which Leakage Power And Le


Keywords

MTCMOS Carbon Nano Tube H-SPICE Leakage Current Leakage Power Etc.

Paper ID

IJSARTV3I412979

Publication Date

April 21, 2017

Research Area

ECE

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