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Volume 6, Issue 12 (December 2020)

An Impact Of Gate Dielectric Material On Mos Devices

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Volume 12 Issue 07

July 2026

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Author(s)

Akanksha Arya Abhishikta Ghosh Roy Suchismita Das Shivani Saxena

Abstract

Metal Oxide Field Effect Transistor (MOS) Consists A, Controlling Input, Called ‘Gate Electrode’, It Is Often Called "gate Metal" Or "gate Conductor", Which Controls The Threshold Voltage Of The Device. The Underlying Material Of This Gate Terminal Is A


Keywords

MOSFET Gate Dielectric SiO2 Si3N4 Al2O3 And Ta2O5.

Paper ID

IJSARTV6I1241802

Publication Date

December 28, 2020

Research Area

Physical Sciences

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