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Volume 12 Issue 07
July 2026
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Author(s)
Prof. Rupali S. Khule Sonali R.Handge
Abstract
Static Random Access Memory (SRAM) Is A Matrix Of Static Volatile Memory Cell. 6T SRAM Suffers From Read Current Disturbance, 8T SRAM Has Leakage In Read Path, 9T SRAM Increases Read Access Time. 10T Differential Schmitt Trigger SRAM Cell Suffered From Re
Keywords
Leakage Current
Low Power
SRAM
Stability
Static Noise Margin (SNM)
Schmitt Trigger.
Paper ID
IJSARTV3I715994
Publication Date
July 13, 2017
Research Area
E&TC