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Volume 12 Issue 07
July 2026
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Author(s)
Durgesh Kumar Soni Mrs. S. Madhavi Bhanwar
Abstract
This Paper Show’s The Low Noise Amplifier Having Gain Of 30 DB , S11 Of -25 DB And S22 Of -22 DB. The LNA Designed Is Of Two Stage, Both Are Body Biased I.e. 0.3V Is Applied At The Substrate Of NMOS Transistor. A Inductor Is Also Added In The First Stage
Keywords
LNA
Gain
Body Biased
5G
Substrate
Inductor.
Paper ID
IJSARTV6I436304
Publication Date
April 8, 2020
Research Area
ECE